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翻訳と辞書　辞書検索 [ 開発暫定版 ] スポンサード リンク Time-dependent gate oxide breakdown ： ウィキペディア英語版 Time-dependent gate oxide breakdown Time-dependent gate oxide breakdown (or time-dependent dielectric breakdown, TDDB) is a failure mechanism in MOSFETs, when the gate oxide breaks down as a result of long-time application of relatively low electric field (as opposite to immediate breakdown, which is caused by strong electric field). The breakdown is caused by formation of a conducting path through the gate oxide to substrate due to electron tunneling current, when MOSFETs are operated close to or beyond their specified operating voltages. == Test method == The most commonly used test for the investigation of TDDB behavior is "constant stress".〔(A. Elhami Khorasani, "A Fast I-V Screening Measurement for TDDB Assessment of Ultra-Thick Inter-Metal Dielectrics," IEEE Electron Dev. Lett., vol. 35, pp. 117-119, 2014 )〕 Constant stress tests can be applied in form of constant voltage stress (CVS) or constant current stress. In the former, a voltage (that is often lower than the breakdown voltage of the oxide) is applied to the gate, while its leakage current is being monitored. The time it will take for the oxide to break under this constant applied voltage is called the time-to-failure. The test is then repeated several times to obtain a distribution of time-to-failure.〔 These distributions are used to create reliability plots and to predict the TDDB behavior of oxide at other voltages. 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Time-dependent gate oxide breakdown」の詳細全文を読む スポンサード リンク 翻訳と辞書 : 翻訳のためのインターネットリソース Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.